Treatise on Materials Science and Technology, Volume 2; Volume 19, Part 1 |
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Page 156
Some new developments of photoluminescence techniques related to the area of
defect identification will therefore be briefly discussed in the last ... Another
important class of defects in semiconductors are the line defects , called
dislocations .
Some new developments of photoluminescence techniques related to the area of
defect identification will therefore be briefly discussed in the last ... Another
important class of defects in semiconductors are the line defects , called
dislocations .
Page 197
V . Studies of Dislocation - Related Defects in Semiconductors with
Photoluminescence Techniques A . General Properties of Dislocations and Their
Influence on Electronic Properties of Semiconductor Device Materials Extended
defects in ...
V . Studies of Dislocation - Related Defects in Semiconductors with
Photoluminescence Techniques A . General Properties of Dislocations and Their
Influence on Electronic Properties of Semiconductor Device Materials Extended
defects in ...
Page 199
A discussion on the particular problems with dislocation defects in Si devices can
be found in a previous volume in this series ( Melliar - Smith , 1977 ) . Perhaps
the most drastic effects of dislocations in III - V materials , in particular those with ...
A discussion on the particular problems with dislocation defects in Si devices can
be found in a previous volume in this series ( Melliar - Smith , 1977 ) . Perhaps
the most drastic effects of dislocations in III - V materials , in particular those with ...
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Contents
R JAMES | 2 |
Principles of XRay Stress Measurement | 4 |
Control of Accuracy and Precision | 25 |
Copyright | |
15 other sections not shown
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absorption additional allows alloy angle Appl applications atoms bandgap beam broadening cause coefficients components composition composition profile concentration constant containing cooling crystal curve defects dependent deposits depth determined developed diffraction diffusion direction discussed dislocation distance distribution effect electron elements employed energy error et al example excitation experimental factor field function give given grain heat important included increasing intensity intensity bands iron laser lattice layer less magnetic material measurements Metals method Mössbauer observed obtained occur optical parameter peak phase Phys plane position possible powder problem produce range rays recent region relative residual stress sample semiconductors shift shown single Society solid spacing specimen spectra spectrum sputtering steel structure studies substrate surface target technique temperature term thickness values variation volume x-ray