Treatise on Materials Science and Technology, Volume 2; Volume 19, Part 1 |
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Page 197
V . Studies of Dislocation - Related Defects in Semiconductors with
Photoluminescence Techniques A . General Properties of Dislocations and Their
Influence on Electronic Properties of Semiconductor Device Materials Extended
defects in ...
V . Studies of Dislocation - Related Defects in Semiconductors with
Photoluminescence Techniques A . General Properties of Dislocations and Their
Influence on Electronic Properties of Semiconductor Device Materials Extended
defects in ...
Page 198
Still dislocation - induced electronic states in the bandgap are calculated to exist
for a screw dislocation ( Celli et al . , 1962 ) , as well as supported by
experimental data ( Glaenzer and Jordan , 1969 ) . These intrinsic states of the
dislocations ...
Still dislocation - induced electronic states in the bandgap are calculated to exist
for a screw dislocation ( Celli et al . , 1962 ) , as well as supported by
experimental data ( Glaenzer and Jordan , 1969 ) . These intrinsic states of the
dislocations ...
Page 203
C . Studies of Dislocation Motion via Photoluminescence Topography One of the
most important applications of PL topography is the possibilities to study in situ
dislocation motion and growth in a material . As noted above a dislocation gives ...
C . Studies of Dislocation Motion via Photoluminescence Topography One of the
most important applications of PL topography is the possibilities to study in situ
dislocation motion and growth in a material . As noted above a dislocation gives ...
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Contents
R JAMES | 2 |
Principles of XRay Stress Measurement | 4 |
Control of Accuracy and Precision | 25 |
Copyright | |
15 other sections not shown
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absorption additional allows alloy angle Appl applications atoms bandgap beam broadening cause coefficients components composition composition profile concentration constant containing cooling crystal curve defects dependent deposits depth determined developed diffraction diffusion direction discussed dislocation distance distribution effect electron elements employed energy error et al example excitation experimental factor field function give given grain heat important included increasing intensity intensity bands iron laser lattice layer less magnetic material measurements Metals method Mössbauer observed obtained occur optical parameter peak phase Phys plane position possible powder problem produce range rays recent region relative residual stress sample semiconductors shift shown single Society solid spacing specimen spectra spectrum sputtering steel structure studies substrate surface target technique temperature term thickness values variation volume x-ray