Treatise on Materials Science and Technology, Volume 2; Volume 19, Part 1 |
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Page 159
In the growth of such materials , homogeneity in composition ( value of x ) can be
critically dependent on several growth parameters ( Panish and Ilegems , 1972 ;
Hsieh , 1974 ; Moon , 1974 ; Small and Crossley , 1974 ) . The achievement of a ...
In the growth of such materials , homogeneity in composition ( value of x ) can be
critically dependent on several growth parameters ( Panish and Ilegems , 1972 ;
Hsieh , 1974 ; Moon , 1974 ; Small and Crossley , 1974 ) . The achievement of a ...
Page 171
B . Photoluminescence Profiling of Spectral Properties Related to
Inhomogeneities in Doping Many of the presently available growth techniques for
semiconducting materials seem to have an inherent property of creating
inhomogeneous ...
B . Photoluminescence Profiling of Spectral Properties Related to
Inhomogeneities in Doping Many of the presently available growth techniques for
semiconducting materials seem to have an inherent property of creating
inhomogeneous ...
Page 206
Another important application of the PL topography is to monitor the so called
DLD growth in the active region of semiconductor lasers of LEDs ( Johnston et al
. , 1974 ; Petroff et al . , 1974 , 1976 ; O ' Hara et al . , 1977 ; Woolhouse et al .
Another important application of the PL topography is to monitor the so called
DLD growth in the active region of semiconductor lasers of LEDs ( Johnston et al
. , 1974 ; Petroff et al . , 1974 , 1976 ; O ' Hara et al . , 1977 ; Woolhouse et al .
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Contents
R JAMES | 2 |
Principles of XRay Stress Measurement | 4 |
Control of Accuracy and Precision | 25 |
Copyright | |
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absorption additional allows alloy angle Appl applications atoms bandgap beam broadening cause coefficients components composition composition profile concentration constant containing cooling crystal curve defects dependent deposits depth determined developed diffraction diffusion direction discussed dislocation distance distribution effect electron elements employed energy error et al example excitation experimental factor field function give given grain heat important included increasing intensity intensity bands iron laser lattice layer less magnetic material measurements Metals method Mössbauer observed obtained occur optical parameter peak phase Phys plane position possible powder problem produce range rays recent region relative residual stress sample semiconductors shift shown single Society solid spacing specimen spectra spectrum sputtering steel structure studies substrate surface target technique temperature term thickness values variation volume x-ray