Treatise on Materials Science and Technology, Volume 2; Volume 19, Part 1 |
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Page 159
most easily achieved by alloying two ( or more ) different materials . Many solid
state devices , in particular optoelectronic devices , such as DH injection lasers
and LEDs , make critical use of the tailoring of bandgap ( and refractive index ) ...
most easily achieved by alloying two ( or more ) different materials . Many solid
state devices , in particular optoelectronic devices , such as DH injection lasers
and LEDs , make critical use of the tailoring of bandgap ( and refractive index ) ...
Page 162
Bulk diffusion lengths for excess carriers are usually rather short for direct
bandgap materials ( 1 - 10 um in GaAs , dependent on doping ( Casey et al . ,
1973 ; Ettenberg et al . , 1973 ) ] , but can be much longer in indirect gap
materials , such ...
Bulk diffusion lengths for excess carriers are usually rather short for direct
bandgap materials ( 1 - 10 um in GaAs , dependent on doping ( Casey et al . ,
1973 ; Ettenberg et al . , 1973 ) ] , but can be much longer in indirect gap
materials , such ...
Page 164
Several methods to achieve such reduction of carrier diffusion lengths can be
comtemplated ; all dependent on an introduction of damage , i . e . , additional
efficient recombination centers , into the material , which shorten carrier lifetime
and ...
Several methods to achieve such reduction of carrier diffusion lengths can be
comtemplated ; all dependent on an introduction of damage , i . e . , additional
efficient recombination centers , into the material , which shorten carrier lifetime
and ...
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Contents
R JAMES | 2 |
Principles of XRay Stress Measurement | 4 |
Control of Accuracy and Precision | 25 |
Copyright | |
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absorption additional allows alloy angle Appl applications atoms bandgap beam broadening cause coefficients components composition composition profile concentration constant containing cooling crystal curve defects dependent deposits depth determined developed diffraction diffusion direction discussed dislocation distance distribution effect electron elements employed energy error et al example excitation experimental factor field function give given grain heat important included increasing intensity intensity bands iron laser lattice layer less magnetic material measurements Metals method Mössbauer observed obtained occur optical parameter peak phase Phys plane position possible powder problem produce range rays recent region relative residual stress sample semiconductors shift shown single Society solid spacing specimen spectra spectrum sputtering steel structure studies substrate surface target technique temperature term thickness values variation volume x-ray