Treatise on Materials Science and Technology, Volume 2; Volume 19, Part 1 |
From inside the book
Results 1-3 of 23
Page 43
The term d max – de thus represents the range of d spacings present . Actually
the same range of d spacing could also be due to elastic anisotropy and the
influence of neighboring grains , so the treatment is really more general than was
...
The term d max – de thus represents the range of d spacings present . Actually
the same range of d spacing could also be due to elastic anisotropy and the
influence of neighboring grains , so the treatment is really more general than was
...
Page 176
( Hopfield et al . , 1963 ) hv = Eg - Ed - Ea + ( e2 / 471 € Cor DA ) ( 3 ) where the
coulomb interaction term ( when present ) can be determined from an
extrapolation procedure . Thus the quantity Ed + Ea is determined for each donor
and ...
( Hopfield et al . , 1963 ) hv = Eg - Ed - Ea + ( e2 / 471 € Cor DA ) ( 3 ) where the
coulomb interaction term ( when present ) can be determined from an
extrapolation procedure . Thus the quantity Ed + Ea is determined for each donor
and ...
Page 201
At present the existence of intrinsic interface recombination states within the
bandgap at such heterointerfaces is not firmly established for the case of Al , Ga -
GaAs ( Kroemer et al . , 1978 ; Pollman and Pantelides , 1979 ) , although there ...
At present the existence of intrinsic interface recombination states within the
bandgap at such heterointerfaces is not firmly established for the case of Al , Ga -
GaAs ( Kroemer et al . , 1978 ; Pollman and Pantelides , 1979 ) , although there ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
R JAMES | 2 |
Principles of XRay Stress Measurement | 4 |
Control of Accuracy and Precision | 25 |
Copyright | |
15 other sections not shown
Other editions - View all
Common terms and phrases
absorption additional allows alloy angle Appl applications atoms bandgap beam broadening cause coefficients components composition composition profile concentration constant containing cooling crystal curve defects dependent deposits depth determined developed diffraction diffusion direction discussed dislocation distance distribution effect electron elements employed energy error et al example excitation experimental factor field function give given grain heat important included increasing intensity intensity bands iron laser lattice layer less magnetic material measurements Metals method Mössbauer observed obtained occur optical parameter peak phase Phys plane position possible powder problem produce range rays recent region relative residual stress sample semiconductors shift shown single Society solid spacing specimen spectra spectrum sputtering steel structure studies substrate surface target technique temperature term thickness values variation volume x-ray