Treatise on Materials Science and Technology, Volume 2; Volume 19, Part 1 |
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Page 151
Profiling of Bulk Properties of Semiconductors with Photoluminescence . . 158 A .
Composition Profiling of Semiconductor Alloys . . . . . . . . 159 B .
Photoluminescence Profiling of Spectral Properties Related to Inhomogeneities
in Doping .
Profiling of Bulk Properties of Semiconductors with Photoluminescence . . 158 A .
Composition Profiling of Semiconductor Alloys . . . . . . . . 159 B .
Photoluminescence Profiling of Spectral Properties Related to Inhomogeneities
in Doping .
Page 158
Profiling of Bulk Properties of Semiconductors with Photoluminescence As
already mentioned in the introduction , the measurement of photoluminescence
spectra for a semiconductor sample can give information on intrinsic material ...
Profiling of Bulk Properties of Semiconductors with Photoluminescence As
already mentioned in the introduction , the measurement of photoluminescence
spectra for a semiconductor sample can give information on intrinsic material ...
Page 197
V . Studies of Dislocation - Related Defects in Semiconductors with
Photoluminescence Techniques A . General Properties of Dislocations and Their
Influence on Electronic Properties of Semiconductor Device Materials Extended
defects in ...
V . Studies of Dislocation - Related Defects in Semiconductors with
Photoluminescence Techniques A . General Properties of Dislocations and Their
Influence on Electronic Properties of Semiconductor Device Materials Extended
defects in ...
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Contents
R JAMES | 2 |
Principles of XRay Stress Measurement | 4 |
Control of Accuracy and Precision | 25 |
Copyright | |
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absorption additional allows alloy angle Appl applications atoms bandgap beam broadening cause coefficients components composition composition profile concentration constant containing cooling crystal curve defects dependent deposits depth determined developed diffraction diffusion direction discussed dislocation distance distribution effect electron elements employed energy error et al example excitation experimental factor field function give given grain heat important included increasing intensity intensity bands iron laser lattice layer less magnetic material measurements Metals method Mössbauer observed obtained occur optical parameter peak phase Phys plane position possible powder problem produce range rays recent region relative residual stress sample semiconductors shift shown single Society solid spacing specimen spectra spectrum sputtering steel structure studies substrate surface target technique temperature term thickness values variation volume x-ray