Treatise on Materials Science and Technology, Volume 2; Volume 19, Part 1 |
From inside the book
Results 1-3 of 66
Page 103
Considerable opportunity still remains for advances in the diffraction methods
when applied to nucleation and growth studies of intermediate phases within
reacted films . This would probably require an interconnection between the x - ray
...
Considerable opportunity still remains for advances in the diffraction methods
when applied to nucleation and growth studies of intermediate phases within
reacted films . This would probably require an interconnection between the x - ray
...
Page 196
The ODMR method has recently been applied to defect studies in several
semiconductors . Studies of broad band DA - pair spectra in CdS , ZnS , and ZnO
have been performed , giving g factors for donor and acceptor states ( James et
al .
The ODMR method has recently been applied to defect studies in several
semiconductors . Studies of broad band DA - pair spectra in CdS , ZnS , and ZnO
have been performed , giving g factors for donor and acceptor states ( James et
al .
Page 244
Thus , materials studies have been published regularly . The intent in this section
is to briefly review some of the work that has been done and give enough cross
references so that readers interested in specifics can find them in the original ...
Thus , materials studies have been published regularly . The intent in this section
is to briefly review some of the work that has been done and give enough cross
references so that readers interested in specifics can find them in the original ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
R JAMES | 2 |
Principles of XRay Stress Measurement | 4 |
Control of Accuracy and Precision | 25 |
Copyright | |
15 other sections not shown
Other editions - View all
Common terms and phrases
absorption additional allows alloy angle Appl applications atoms bandgap beam broadening cause coefficients components composition composition profile concentration constant containing cooling crystal curve defects dependent deposits depth determined developed diffraction diffusion direction discussed dislocation distance distribution effect electron elements employed energy error et al example excitation experimental factor field function give given grain heat important included increasing intensity intensity bands iron laser lattice layer less magnetic material measurements Metals method Mössbauer observed obtained occur optical parameter peak phase Phys plane position possible powder problem produce range rays recent region relative residual stress sample semiconductors shift shown single Society solid spacing specimen spectra spectrum sputtering steel structure studies substrate surface target technique temperature term thickness values variation volume x-ray