Soviet Physics, Solid State, Volume 10, Pages 761-1520American Institute of Physics., 1968 - Solid state physics |
Contents
P Zhuze | 761 |
Photoeffect Due to Generation of Excitons in Semiconductors | 770 |
Transformation of Electromagnetic and Ultrasonic Waves in Piezoelectric | 777 |
Copyright | |
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1968 Original article absorption amplitude anisotropy atoms axis band Burgers vector calculated carrier coefficient components concentration conduction band constant corresponding Curie point curve defects density determined diffusion dislocation domain wall effect Eksp electric field electron emission energy equation excited exciton experimental Faraday effect film Fizika Tverdogo Tela frequency function glass heat impurity increase intensity interaction investigated ions JETP kg/cm² lattice layer LITERATURE CITED magnetic field measurements metal method observed obtained optical Original article submitted oscillations p-n junction paramagnetic parameters perature phase transition phonon Phys plane polarization region resonance sample scattering Semiconductors shown in Fig silicon single crystals Solid specimen spectra spectrum spin waves spin-lattice relaxation stress structure sublattices surface Tela temperature dependence Teor thermal conductivity tion Translated from Fizika Tverd vacancies valence band values width