Introduction to Applied Solid State Physics: Topics in the Applications of Semiconductors, Superconductors, and the Nonlinear Optical Properties of SolidsThe aim of this book is a discussion, at the introductory level, of some applications of solid state physics. The book evolved from notes written for a course offered three times in the Department of Physics of the University of California at Berkeley. The objects of the course were (a) to broaden the knowledge of graduate students in physics, especially those in solid state physics; (b) to provide a useful course covering the physics of a variety of solid state devices for students in several areas of physics; (c) to indicate some areas of research in applied solid state physics. To achieve these ends, this book is designed to be a survey of the physics of a number of solid state devices. As the italics indicate, the key words in this description are physics and survey. Physics is a key word because the book stresses the basic qualitative physics of the applications, in enough depth to explain the essentials of how a device works but not deeply enough to allow the reader to design one. The question emphasized is how the solid state physics of the application results in the basic useful property of the device. An example is how the physics of the tunnel diode results in a negative dynamic resistance. Specific circuit applications of devices are mentioned, but not emphasized, since expositions are available in the elec trical engineering textbooks given as references. |
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Results 1-3 of 44
Page 59
... increasing with increasing forward bias , and will be small and constant for increasing magnitude of reverse bias ; the situation is shown schemati- cally in Figure 2.28 . Quantitative Treatment of Carrier Injection in the Junction We ...
... increasing with increasing forward bias , and will be small and constant for increasing magnitude of reverse bias ; the situation is shown schemati- cally in Figure 2.28 . Quantitative Treatment of Carrier Injection in the Junction We ...
Page 104
... increasing the resistance R of the channel . Since RdVDs / dlps and R increases with increasing VDs , a plot of VDs as a function of Ips will have a positive slope which increases with increasing VDS . A plot of Ips as a function of Vps ...
... increasing the resistance R of the channel . Since RdVDs / dlps and R increases with increasing VDs , a plot of VDs as a function of Ips will have a positive slope which increases with increasing VDS . A plot of Ips as a function of Vps ...
Page 232
... increasing x , for x less than approximately 2.4 . The amplitude Joc of the n = 0 step responds to incident radiation ( at low values of V , where 2e V1 is less than about 2ħo ) by decreasing with increasing V1 . The critical current of ...
... increasing x , for x less than approximately 2.4 . The amplitude Joc of the n = 0 step responds to incident radiation ( at low values of V , where 2e V1 is less than about 2ħo ) by decreasing with increasing V1 . The critical current of ...
Contents
Review of Semiconductor Physics | 1 |
Effective Mass of Carriers in Semiconductors | 7 |
Impurity Conductivity Extrinsic Conductivity | 14 |
Copyright | |
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Introduction to Applied Solid State Physics: Topics in the Applications of ... Richard Dalven No preview available - 2013 |
Common terms and phrases
absorption acceptor applied potential B. G. Streetman band diagram band edge band structure built-in electric field Chapter conduction band conductor consider constant crystal current density decreases depletion layer dielectric diode discussion donor doping effective mass electric field electron affinity ELECTRON ENERGY electrons and holes electrostatic potential emission emitter energy barrier energy gap equilibrium Fermi energy Fermi level forward bias frequency GaAs hole density impurity increasing injection input ionized John Wiley Josephson effect Kittel laser magnitude metal minority carrier minority hole MOSFET n-type semiconductor negative neutral regions Nonlinear Optics nonlinear susceptibility p-n junction photon photon of energy polarization Quantum recombination Reference result reverse bias S. M. Sze schematically second harmonic shown in Figure side silicon Solid State Physics space charge region Streetman superconducting supercurrent surface temperature tion transistor transition tunneling V₁ valence band voltage w₁ wave equation wave function wave vector width Yariv York zero