Silicon Materials Science and Technology: Proceedings of the Eighth International Symposium on Silicon Materials Science and Technology, Volume 1Howard R. Huff, U. Gösele, H. Tsuya |
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annealing Appl applications atoms base Bell boron calculated carrier caused charge cleaning clusters concentration conductivity contamination crystal crystal growth decrease density dependence determined device diameter diffusion discussed dislocation distribution doping effect electrical Electrochem Electron energy epitaxial etching experimental experiments field Figure flow formation gate germanium grown grown-in growth heat higher hydrogen important increase integrated interface junction Laboratories layer limited lower materials measured mechanism melt metal method nitride observed obtained occur oxide oxygen particle patent Phys point defects position precipitation present produced properties range reaction reduced region removal reported resistivity sample semiconductor Shockley shown shows silicon SiO2 solid stress structure substrate surface Table technique temperature thermal thickness transistor vacancy void voltage wafer
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Page 346 - With the advent of the transistor and the work in semiconductors generally, it seems now possible to envisage electronic equipment in a solid block with no connecting wires. The block may consist of layers of insulating, conducting, rectifying and amplifying materials, the electrical functions being connected directly by cutting out areas of the various layers.
Page 257 - Imperial College of Science, Technology and Medicine Prince Consort Road, London SW7...
Page 65 - Already several transistor structures have been developed and many others have been explored to the extent of demonstrating their ultimate practicality, and still other ideas have been produced which have yet to be subjected to adequate experimental tests. It seems likely that many inventions unforeseen at present will be made based on the principles of carrier injection, the field effect, the Suhl effect, and the properties of rectifying junctions. It is quite probable that other new physical principles...
Page 84 - In a semiconductor containing substantially only one type of current carrier, it is impossible to increase the total carrier concentration by injecting carriers of the same type; however, such increases can be produced by injecting the opposite type since the space charge of the latter can be neutralized by an increased concentration of the type normally present.
Page 64 - It may be appropriate to speculate at this point about the future of transistor electronics. Those who have worked intensively in the field share the author's feeling of great optimism regarding the ultimate potentialities. It appears to most of the workers that an area has been opened up comparable to the entire area of vacuum and gas discharge electronics.
Page 40 - A device called a transistor, which has several applications in radio where a vacuum tube ordinarily is employed, was demonstrated for the first time yesterday at Bell Telephone Laboratories . . . where it was invented".
Page 41 - ... Fermi was designing experiments to study the slowing down of neutrons in graphite. He had confidence that such experiments would be carried out because financial support by the US Government had already been assured to the project. He said that this assurance gave him "the will to think." In these four words he distilled the essence of a very significant insight: A competent thinker will be reluctant to commit himself to the effort that tedious and exacting thinking demands — he will lack the...
Page 347 - Kilby had entered in his notebook six months before: ". . . it would be desirable to make multiple devices on a single piece of silicon, in order to be able to make interconnections between devices as part of the manufacturing process, and thus reduce size, weight, etc. as well as cost per active element.
Page 42 - Chance statistical fluctuations can be ruled out as the explanation for the high activity of the 17 to 24 November week simply by inspection of figure 14— the persistence of the high level for the magic month through the whole first quarter of 1948 is clear evidence that the 17 to 24 November week initiated a real jump upwards in activity. My own increased notebook activity started 3 weeks later on 8 December. In the following week, I used 5 pages— about 10 times my long-term weekly average —...
Page 29 - ... took the seminar for the first two quarters of their freshman year. The seminar was over-subscribed and I selected the experimental students who took it by constructing matched groups of students, based on their scholastic aptitude tests for verbal and mathematical ability (with math rated twice as heavily as verbal). From these matched groups I selected by chance approximately half of the students in the range of scores shown on the figure. The follow-up study of the effectiveness of the seminar...