Treatise on Materials Science and Technology, Volume 2 |
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Page 35
This represents an increase of 15 % beyond that of the simple model assuming
the l values to be the same . ... This assignment of the W ' value differs from the
one adopted for thick crystals , where the shape of the trough is assumed to be ...
This represents an increase of 15 % beyond that of the simple model assuming
the l values to be the same . ... This assignment of the W ' value differs from the
one adopted for thick crystals , where the shape of the trough is assumed to be ...
Page 39
1 ) correspondingly becomes an interfacial potential energy density V = ( uc ? /
412d ) [ 1 - cos ( 21U / c ) ] ( 4 . 5 ) where d , which is usually assumed to be equal
to c , is the distance between the two atomic planes on either side of the junction
...
1 ) correspondingly becomes an interfacial potential energy density V = ( uc ? /
412d ) [ 1 - cos ( 21U / c ) ] ( 4 . 5 ) where d , which is usually assumed to be equal
to c , is the distance between the two atomic planes on either side of the junction
...
Page 75
B . Modelt In the analysis the existence of a concentration gradient will be
assumed . ... studied without regard to the effect of the dislocation strain fields on
the diffusion process itself and assuming that initially the interface was sharp and
flat .
B . Modelt In the analysis the existence of a concentration gradient will be
assumed . ... studied without regard to the effect of the dislocation strain fields on
the diffusion process itself and assuming that initially the interface was sharp and
flat .
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Contents
Epitaxial Interfaces | 3 |
Thin Films | 15 |
Semiinfinite Overgrowths | 52 |
Copyright | |
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Common terms and phrases
angle anisotropy approximation assumed atoms average axis c-site calculated cations coherent compounds concentration condition considerations constants contribution corresponding crystal curve decreases defect density dependence determined diffusion direction discussed dislocations displacement effect elastic elastic scattering electron energy equation et al experimental experiments factor field flux flux lines follows force function garnets given gives important impurity increases interaction interface ions lattice limit magnetic materials measured Merwe metal method misfit mode neutron normal observed obtained optical parameter phase phonon Phys plane position potential present processes properties range reference region resolution respectively sample scattering cross section shown shows single solid solution space strain stress structure substrate superconducting surface Table temperature tetrahedral theory thermal thickness transition unit values vector wave X-ray