Treatise on Materials Science and Technology, Volume 2 |
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Page 8
... and van der Merwe , 1965 ) to illustrate certain properties not contained (
Fletcher , 1964 ; Fletcher and Adamson , 1966 ) in the continuum model . The
curves , corresponding to the various potential representations , are compared in
Fig . 4 .
... and van der Merwe , 1965 ) to illustrate certain properties not contained (
Fletcher , 1964 ; Fletcher and Adamson , 1966 ) in the continuum model . The
curves , corresponding to the various potential representations , are compared in
Fig . 4 .
Page 39
RELATIVE DISPLACEMENT The introduction of C also sets up a one - to - one
correspondence between interfacial atoms of A and B . Accordingly the
displacement of an atom in B relative to the corresponding atom in A is given by
U ( x ) = c ...
RELATIVE DISPLACEMENT The introduction of C also sets up a one - to - one
correspondence between interfacial atoms of A and B . Accordingly the
displacement of an atom in B relative to the corresponding atom in A is given by
U ( x ) = c ...
Page 88
8 and are associated with the corresponding solid curves in Fig . 31 . The jump
from A to B in Fig . 32 corresponds to the introduction of a misfit dislocation at A '
in Fig . 31 . In the conversion between the horizontal scales the value l = 7 has ...
8 and are associated with the corresponding solid curves in Fig . 31 . The jump
from A to B in Fig . 32 corresponds to the introduction of a misfit dislocation at A '
in Fig . 31 . In the conversion between the horizontal scales the value l = 7 has ...
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Contents
Epitaxial Interfaces | 3 |
Thin Films | 15 |
Semiinfinite Overgrowths | 52 |
Copyright | |
10 other sections not shown
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Common terms and phrases
angle anisotropy approximation assumed atoms average axis c-site calculated cations coherent compounds concentration condition considerations constants contribution corresponding crystal curve decreases defect density dependence determined diffusion direction discussed dislocations displacement effect elastic elastic scattering electron energy equation et al experimental experiments factor field flux flux lines follows force function garnets given gives important impurity increases interaction interface ions lattice limit magnetic materials measured Merwe metal method misfit mode neutron normal observed obtained optical parameter phase phonon Phys plane position potential present processes properties range reference region resolution respectively sample scattering cross section shown shows single solid solution space strain stress structure substrate superconducting surface Table temperature tetrahedral theory thermal thickness transition unit values vector wave X-ray
Bibliographic information
| Title | Treatise on Materials Science and Technology, Volume 2 Treatise on Materials Science and Technology, Herbert Herman |
| Editor | Herbert Herman |
| Publisher | Academic Press, 1972 |
| Original from | the University of Michigan |
| Digitized | 29 Nov 2007 |
| Export Citation | BiBTeX EndNote RefMan |