Treatise on Materials Science and Technology, Volume 2 |
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Page 39
RELATIVE DISPLACEMENT The introduction of C also sets up a one - to - one
correspondence between interfacial atoms of A and B . Accordingly the
displacement of an atom in B relative to the corresponding atom in A is given by
U ( x ) = c ...
RELATIVE DISPLACEMENT The introduction of C also sets up a one - to - one
correspondence between interfacial atoms of A and B . Accordingly the
displacement of an atom in B relative to the corresponding atom in A is given by
U ( x ) = c ...
Page 168
where k Thkl , Cp < 1 , and linear superposition of the displacements originating
from the defects is assumed . The Fourier transform in the ... The crucial term in
Eq . ( 47 ) is the linear displacement term iks ) ( K ) . A reasonable discussion of it
...
where k Thkl , Cp < 1 , and linear superposition of the displacements originating
from the defects is assumed . The Fourier transform in the ... The crucial term in
Eq . ( 47 ) is the linear displacement term iks ) ( K ) . A reasonable discussion of it
...
Page 181
96B10 . 04 system mentioned before , all displacement data have much more
structure than an isotropic case would give . For Cu0 . 84A10 . 16 even a change
of the direction of the displacement son with increasing distance has been found .
96B10 . 04 system mentioned before , all displacement data have much more
structure than an isotropic case would give . For Cu0 . 84A10 . 16 even a change
of the direction of the displacement son with increasing distance has been found .
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Contents
Epitaxial Interfaces | 3 |
Thin Films | 15 |
Semiinfinite Overgrowths | 52 |
Copyright | |
10 other sections not shown
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Common terms and phrases
angle anisotropy approximation assumed atoms average axis c-site calculated cations coherent compounds concentration condition considerations constants contribution corresponding crystal curve decreases defect density dependence determined diffusion direction discussed dislocations displacement effect elastic elastic scattering electron energy equation et al experimental experiments factor field flux flux lines follows force function garnets given gives important impurity increases interaction interface ions lattice limit magnetic materials measured Merwe metal method misfit mode neutron normal observed obtained optical parameter phase phonon Phys plane position potential present processes properties range reference region resolution respectively sample scattering cross section shown shows single solid solution space strain stress structure substrate superconducting surface Table temperature tetrahedral theory thermal thickness transition unit values vector wave X-ray
Bibliographic information
| Title | Treatise on Materials Science and Technology, Volume 2 Treatise on Materials Science and Technology, Herbert Herman |
| Editor | Herbert Herman |
| Publisher | Academic Press, 1972 |
| Original from | the University of Michigan |
| Digitized | 29 Nov 2007 |
| Export Citation | BiBTeX EndNote RefMan |