Treatise on Materials Science and Technology, Volume 2 |
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Page 39
5 ) where d , which is usually assumed to be equal to c , is the distance between
the two atomic planes on either side of the ... Mathematically the plane z = 0 is
thus assumed to be one of these , the specific one depending on which crystal is
...
5 ) where d , which is usually assumed to be equal to c , is the distance between
the two atomic planes on either side of the ... Mathematically the plane z = 0 is
thus assumed to be one of these , the specific one depending on which crystal is
...
Page 76
( a ) Vertical lines represent atomic planes in normal crystal . ( b ) Bent crystal
owing to constant ... 29 ( b ) , where p is the radius of curvature of the bent crystal
and z is measured from the lower plane . If this crystal is straightened as in Fig .
( a ) Vertical lines represent atomic planes in normal crystal . ( b ) Bent crystal
owing to constant ... 29 ( b ) , where p is the radius of curvature of the bent crystal
and z is measured from the lower plane . If this crystal is straightened as in Fig .
Page 137
In practice the scattering plane , i . e . , the plane containing ko and kį , is often a
symmetry plane of the crystal investigated . In such cases Ŝ ( K , ) is equal to Ŝ ( -
K , ) and therefore Ŝ ( k ) is an extremum with respect to , . This means § changes
...
In practice the scattering plane , i . e . , the plane containing ko and kį , is often a
symmetry plane of the crystal investigated . In such cases Ŝ ( K , ) is equal to Ŝ ( -
K , ) and therefore Ŝ ( k ) is an extremum with respect to , . This means § changes
...
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Contents
Epitaxial Interfaces | 3 |
Thin Films | 15 |
Semiinfinite Overgrowths | 52 |
Copyright | |
10 other sections not shown
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Common terms and phrases
angle anisotropy approximation assumed atoms average axis c-site calculated cations coherent compounds concentration condition considerations constants contribution corresponding crystal curve decreases defect density dependence determined diffusion direction discussed dislocations displacement effect elastic elastic scattering electron energy equation et al experimental experiments factor field flux flux lines follows force function garnets given gives important impurity increases interaction interface ions lattice limit magnetic materials measured Merwe metal method misfit mode neutron normal observed obtained optical parameter phase phonon Phys plane position potential present processes properties range reference region resolution respectively sample scattering cross section shown shows single solid solution space strain stress structure substrate superconducting surface Table temperature tetrahedral theory thermal thickness transition unit values vector wave X-ray
Bibliographic information
| Title | Treatise on Materials Science and Technology, Volume 2 Treatise on Materials Science and Technology, Herbert Herman |
| Editor | Herbert Herman |
| Publisher | Academic Press, 1972 |
| Original from | the University of Michigan |
| Digitized | 29 Nov 2007 |
| Export Citation | BiBTeX EndNote RefMan |