Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 40
... annealed at temperature above 350 ° C are mobile . For the fluorinated polyimide films soft baked as well as annealed below 300 ° C in air for 1 h , there is no flat band voltage shift ( See Fig . 10f ) , indicating that there is ...
... annealed at temperature above 350 ° C are mobile . For the fluorinated polyimide films soft baked as well as annealed below 300 ° C in air for 1 h , there is no flat band voltage shift ( See Fig . 10f ) , indicating that there is ...
Page 41
... annealed film ( 300 ° C , 1h . , air ) ( c ) annealed film ( 350 ° C , 400 ° C , 1h . , air ) ( d ) annealed film ( 350 ° C , 400 ° C , 1h . , air ) biased temperature stressing ( 45V , 150 ° C , 15 min . ) ( e ) annealed film ( 450 ° C ...
... annealed film ( 300 ° C , 1h . , air ) ( c ) annealed film ( 350 ° C , 400 ° C , 1h . , air ) ( d ) annealed film ( 350 ° C , 400 ° C , 1h . , air ) biased temperature stressing ( 45V , 150 ° C , 15 min . ) ( e ) annealed film ( 450 ° C ...
Page 233
... annealed vs. less annealed BCB films . Softer BCB films are abraded easily leading to a higher rate of about 1.05 1.1 μm / min as compared to annealed films with polish rates of about 0.7 0.75 μm / min at the same pH values ( pH < 2 ) ...
... annealed vs. less annealed BCB films . Softer BCB films are abraded easily leading to a higher rate of about 1.05 1.1 μm / min as compared to annealed films with polish rates of about 0.7 0.75 μm / min at the same pH values ( pH < 2 ) ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch