Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 74
... BPDA / PDA PEA , PMDA- BTDA / PDA PEA , and PMDA - ODPA / PDA PEA . These alternating copolyimide precursor products consist of two different types of linkages , amic isopropyl ester and amic acid which were originated from the new ...
... BPDA / PDA PEA , PMDA- BTDA / PDA PEA , and PMDA - ODPA / PDA PEA . These alternating copolyimide precursor products consist of two different types of linkages , amic isopropyl ester and amic acid which were originated from the new ...
Page 75
... PDA and BPDA - PDA homopolymers : 4.27 Å for PMDA- PDA and 4.84 Å for BPDA - PDA . In a comparison with the x - ray diffraction patterns of PMDA - PDA and BPDA - PDA , their alternating copolyimide shows the BPDA - PDA like transmission ...
... PDA and BPDA - PDA homopolymers : 4.27 Å for PMDA- PDA and 4.84 Å for BPDA - PDA . In a comparison with the x - ray diffraction patterns of PMDA - PDA and BPDA - PDA , their alternating copolyimide shows the BPDA - PDA like transmission ...
Page 77
... BPDA / PDA copolyimide . For alternating PMDA - BTDA / PDA copolyimide , the projected length of chemical repeat unit and mean intermolecular distance are 29.45 Å and 4.65 Å , respectively . The alternating PMDA - ODPA / PDA copolyimide ...
... BPDA / PDA copolyimide . For alternating PMDA - BTDA / PDA copolyimide , the projected length of chemical repeat unit and mean intermolecular distance are 29.45 Å and 4.65 Å , respectively . The alternating PMDA - ODPA / PDA copolyimide ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch