Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 29
... discussions on the fluorinated polyimide copolymers . Appreciation is also extended to the personnel of the former Electronic Materials Characterization Lab ( M. Pottiger , R. Subramanian , etc ) and especially to R. Pryor for TGA , TMA ...
... discussions on the fluorinated polyimide copolymers . Appreciation is also extended to the personnel of the former Electronic Materials Characterization Lab ( M. Pottiger , R. Subramanian , etc ) and especially to R. Pryor for TGA , TMA ...
Page 95
... Discussion The most important properties of the polyphenylquinoxaline films compared to those of a polyimide prepared by the reaction of 1,2,4,5 - benzenetetracarboxylic acid dianhydride ( PMDA ) and 4,4 ' - oxybisbenzeneamine ( ODA ) ...
... Discussion The most important properties of the polyphenylquinoxaline films compared to those of a polyimide prepared by the reaction of 1,2,4,5 - benzenetetracarboxylic acid dianhydride ( PMDA ) and 4,4 ' - oxybisbenzeneamine ( ODA ) ...
Page 231
... DISCUSSION Figures 2 , 3 and 4 show the polish rate in μm / min for PA , BCB and FP , respectively , as a function of the pH of the slurry . Note acidic slurries were controlled by the use of HNO3 acid while basic slurries were obtained ...
... DISCUSSION Figures 2 , 3 and 4 show the polish rate in μm / min for PA , BCB and FP , respectively , as a function of the pH of the slurry . Note acidic slurries were controlled by the use of HNO3 acid while basic slurries were obtained ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch