Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Results 1-3 of 25
Page 35
... FTIR by which the decomposed segments can be identified . The initial weight loss of the polyimide started slowly at 250 ° C as shown in Fig . 3. This is due to the evaporation of residual NMP solvent , which is clearly shown in the FTIR ...
... FTIR by which the decomposed segments can be identified . The initial weight loss of the polyimide started slowly at 250 ° C as shown in Fig . 3. This is due to the evaporation of residual NMP solvent , which is clearly shown in the FTIR ...
Page 120
... ( FTIR ) [ 4 ] . Due to space limitations , these results are not shown in the paper . The FTIR data show that the degree of immidization for 400 ° C furnace samples is same as that of the 300 ° C bottom bank plus VUV samples . As ...
... ( FTIR ) [ 4 ] . Due to space limitations , these results are not shown in the paper . The FTIR data show that the degree of immidization for 400 ° C furnace samples is same as that of the 300 ° C bottom bank plus VUV samples . As ...
Page 124
... FTIR and MS to monitor chemical composition of thermal evolved gases . FTIR spectra of Parylene N were collected during a temperature ramp . The spectra shown in Figure 3 indicate that the decomposed material from the film is p - xylene ...
... FTIR and MS to monitor chemical composition of thermal evolved gases . FTIR spectra of Parylene N were collected during a temperature ramp . The spectra shown in Figure 3 indicate that the decomposed material from the film is p - xylene ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch