Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 124
... Figure 1 is a dynamic TGA analysis ramped at 10 ° C / min rate for Parylene N ( c.a. 1 um ) on a silicon wafer . The on - set thermal decomposition point was 480 ° C . Figure 2 shows isothermal TGA plots for samples held at 350 ° C and ...
... Figure 1 is a dynamic TGA analysis ramped at 10 ° C / min rate for Parylene N ( c.a. 1 um ) on a silicon wafer . The on - set thermal decomposition point was 480 ° C . Figure 2 shows isothermal TGA plots for samples held at 350 ° C and ...
Page 211
... Figure 8. Cross - section of a four layer AI / PA test structure . FAREAS The test structures were evaluated ... Figure 10 ; stripline ( two layer ) Al / PA structure are shown in Figure 11 ; ustripline ( four layer ) Cu / PA structure ...
... Figure 8. Cross - section of a four layer AI / PA test structure . FAREAS The test structures were evaluated ... Figure 10 ; stripline ( two layer ) Al / PA structure are shown in Figure 11 ; ustripline ( four layer ) Cu / PA structure ...
Page 223
... Figure 3. Schematics of interconnect structures for control and polyimide on top row . Cross - sectional SEMs of a completed control interconnect and a partially completed polyimide ILD on the bottom row . The trace of the PEN indicates ...
... Figure 3. Schematics of interconnect structures for control and polyimide on top row . Cross - sectional SEMs of a completed control interconnect and a partially completed polyimide ILD on the bottom row . The trace of the PEN indicates ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch