Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 162
REFERENCES [ 1 ] A . Takahashi , A . Nagai , A . Mukoh , M . Wajima , and K .
Tsukanishi , “ Low dielectric material for multilayer printed wiring boards , ” IEEE
Trans . Components , Hybrids , and Manufacturing Technology , vol . 13 , pp .
REFERENCES [ 1 ] A . Takahashi , A . Nagai , A . Mukoh , M . Wajima , and K .
Tsukanishi , “ Low dielectric material for multilayer printed wiring boards , ” IEEE
Trans . Components , Hybrids , and Manufacturing Technology , vol . 13 , pp .
Page 163
[ 20 ] H . Tanaka and F . Okada , “ Precise measurements of dissipation factor in
microwave printed circuit boards , " IEEE Trans . Instrum . Meas . , vol . IM - 38 ,
pp . 509 - 514 , April 1989 . [ 21 ] J . Murray Olyphant and J . H . Ball , “ Stripline ...
[ 20 ] H . Tanaka and F . Okada , “ Precise measurements of dissipation factor in
microwave printed circuit boards , " IEEE Trans . Instrum . Meas . , vol . IM - 38 ,
pp . 509 - 514 , April 1989 . [ 21 ] J . Murray Olyphant and J . H . Ball , “ Stripline ...
Page 284
densify and to diffuse out methyl ( - CH3 ) group in SOG film . The SOG film
appears to be more relaxed by the energy released from the conversion of Ar * to
Ar . REFERENCES 1 . M . Welling , V . Jain and C . Gabriel , Proc . of IEEE VMIC
...
densify and to diffuse out methyl ( - CH3 ) group in SOG film . The SOG film
appears to be more relaxed by the energy released from the conversion of Ar * to
Ar . REFERENCES 1 . M . Welling , V . Jain and C . Gabriel , Proc . of IEEE VMIC
...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers