Low-dielectric Constant Materials |
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Page 69
9-10, 1994; (b) T.S. Kuan, "Low Dielectric Constant Interlevel Dielectrics for High
Performance Interconnects", ... [10] (a) B. Luther, et al., Proceedings, 10th
International VLSI Multilevel Interconnection Conference (VMIC), Santa Clara,
CA, ...
9-10, 1994; (b) T.S. Kuan, "Low Dielectric Constant Interlevel Dielectrics for High
Performance Interconnects", ... [10] (a) B. Luther, et al., Proceedings, 10th
International VLSI Multilevel Interconnection Conference (VMIC), Santa Clara,
CA, ...
Page 70
[13] L.-J. Chen, et al., Proceedings, 11th International VLSI Multilevel
Interconnection Conference, Santa Clara, CA, June 7-8, 1994, p. 81 . [14] J. S.
Drage, et al., Proceedings, 10th International VLSI Multilevel Interconnection
Conference ...
[13] L.-J. Chen, et al., Proceedings, 11th International VLSI Multilevel
Interconnection Conference, Santa Clara, CA, June 7-8, 1994, p. 81 . [14] J. S.
Drage, et al., Proceedings, 10th International VLSI Multilevel Interconnection
Conference ...
Page 177
Such insulators directly reduce RC delay, which is particularly important with long
-distant interconnects present in microprocessors and application specific ICs (
ASICs). When properly incorporated into on-chip multilevel interconnect ...
Such insulators directly reduce RC delay, which is particularly important with long
-distant interconnects present in microprocessors and application specific ICs (
ASICs). When properly incorporated into on-chip multilevel interconnect ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
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Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI