Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 218
... ( PECVD ) of SiO2 for ILD , a stack of PECVD phosphosilicate glass ( PSG ) and PECVD SIN ( PEN ) for chip passivation , and a polyimide for die coat protection . Process Requirements The interconnect technology required for our ...
... ( PECVD ) of SiO2 for ILD , a stack of PECVD phosphosilicate glass ( PSG ) and PECVD SIN ( PEN ) for chip passivation , and a polyimide for die coat protection . Process Requirements The interconnect technology required for our ...
Page 242
... PECVD- SiO , films . No crack or void is observed for any of the films . Table I summarizes the dielectric constant , planarization major degree and formation temperature , which are the three properties for interlayer dielectric films ...
... PECVD- SiO , films . No crack or void is observed for any of the films . Table I summarizes the dielectric constant , planarization major degree and formation temperature , which are the three properties for interlayer dielectric films ...
Page 273
... PECVD ) which leads to insulating DLC films ( films of amorphous carbon containing hydrogen ) and films of ... PECVD 2 DLC 4.2 PECVD 3 DLC 4.5 PECVD 4 DLC < 4 PECVD 5 h - BN 4.0-4.7 PECVD 6 h - BN 2.2-4.41 PECVD 7 h - BN 2.9 PECVD 8 h ...
... PECVD ) which leads to insulating DLC films ( films of amorphous carbon containing hydrogen ) and films of ... PECVD 2 DLC 4.2 PECVD 3 DLC 4.5 PECVD 4 DLC < 4 PECVD 5 h - BN 4.0-4.7 PECVD 6 h - BN 2.2-4.41 PECVD 7 h - BN 2.9 PECVD 8 h ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch