Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 124
THERMAL STABILITY STUDY OF PARYLENEN . a Parylene N is a vapor deposited polymer with excellent conformality ' . The chemical composition of the Parylene N monomer is CH2C6H.CH2 . Thermal analysis of Parylene was made on TGA , FTIR and ...
THERMAL STABILITY STUDY OF PARYLENEN . a Parylene N is a vapor deposited polymer with excellent conformality ' . The chemical composition of the Parylene N monomer is CH2C6H.CH2 . Thermal analysis of Parylene was made on TGA , FTIR and ...
Page 187
In the gap - filling application most suitable with conventional metallization , parylene - n has been particularly successful because of the conformal nature of the parylene deposition , as previously reported [ 14-15 ) .
In the gap - filling application most suitable with conventional metallization , parylene - n has been particularly successful because of the conformal nature of the parylene deposition , as previously reported [ 14-15 ) .
Page 210
Photoresist Stencil Release laver Parylene Substrate + Previously Fabricated Layers 1. Deposit Parylene ; Coat release layer ; stehcil and photoresist 2. Pattern resist eich Parylene and release ; layer and 3. Deposit Metal 4.
Photoresist Stencil Release laver Parylene Substrate + Previously Fabricated Layers 1. Deposit Parylene ; Coat release layer ; stehcil and photoresist 2. Pattern resist eich Parylene and release ; layer and 3. Deposit Metal 4.
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |