Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
From inside the book
Results 1-3 of 31
Page 124
... PARYLENE N Parylene N is a vapor deposited polymer with excellent conformality ' . The chemical composition of the Parylene N monomer is CH2C6H4CH2 . Thermal analysis of Parylene was made on TGA , FTIR and a Mass Spectrometer ( MS ) ...
... PARYLENE N Parylene N is a vapor deposited polymer with excellent conformality ' . The chemical composition of the Parylene N monomer is CH2C6H4CH2 . Thermal analysis of Parylene was made on TGA , FTIR and a Mass Spectrometer ( MS ) ...
Page 187
... parylene - n has been particularly successful because of the conformal nature of the parylene deposition , as previously reported [ 14-15 ] . While we have also processed polyimide siloxane , PQA - 4015 and flourinated polyimide 37B ...
... parylene - n has been particularly successful because of the conformal nature of the parylene deposition , as previously reported [ 14-15 ] . While we have also processed polyimide siloxane , PQA - 4015 and flourinated polyimide 37B ...
Page 210
... Parylene Photoresist Release Laver Substrate + Previously Fabricated Layers 1. Deposit Parylene ; Coat release layer ; stencil and photoresist and 2. Pattern resist etch stencil and release ; Parylene 3. Deposit Metal 4. Lift - off ...
... Parylene Photoresist Release Laver Substrate + Previously Fabricated Layers 1. Deposit Parylene ; Coat release layer ; stencil and photoresist and 2. Pattern resist etch stencil and release ; Parylene 3. Deposit Metal 4. Lift - off ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch