Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 239
... ( SiOF ) film by room temperature chemical vapor deposition ( RTCVD - SiOF ) using fluorotrialkoxysilane ( FTAS ) and pure water as gas sources , ( ii ) a room temperature liquid phase deposition ( LPD ) SiO2 film , and ( iii ) a ...
... ( SiOF ) film by room temperature chemical vapor deposition ( RTCVD - SiOF ) using fluorotrialkoxysilane ( FTAS ) and pure water as gas sources , ( ii ) a room temperature liquid phase deposition ( LPD ) SiO2 film , and ( iii ) a ...
Page 242
... RTCVD - SiOF , 0.8 μm thick LPD - SiO2 and FAST- SOG films formed on the substrate surfaces with Al or W wiring patterns , respectively , as compared to ( d ) the TEOS / O , SiO2 film . The RTCVD - SiOF film is conformably deposited on ...
... RTCVD - SiOF , 0.8 μm thick LPD - SiO2 and FAST- SOG films formed on the substrate surfaces with Al or W wiring patterns , respectively , as compared to ( d ) the TEOS / O , SiO2 film . The RTCVD - SiOF film is conformably deposited on ...
Page 244
... RTCVD - SiOF , LPD - SiO2 and FAST - SOG films , as compared to that for the TEOS / O , SiO2 film . For the RTCVD - SiOF film , two absorption peaks corresponding to Si - F and Si - O bonds are observed at the wavenumbers of 930 and ...
... RTCVD - SiOF , LPD - SiO2 and FAST - SOG films , as compared to that for the TEOS / O , SiO2 film . For the RTCVD - SiOF film , two absorption peaks corresponding to Si - F and Si - O bonds are observed at the wavenumbers of 930 and ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch