Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 280
... SOG film used in this study was obtained from Allied Chemical 211 , i.e. , a methylsiloxane ( polysiloxane ) polymer dissolved in alcohol and ketone . The weight percentage of -CH3 in SOG is approximately 11 % . The liquid materials ...
... SOG film used in this study was obtained from Allied Chemical 211 , i.e. , a methylsiloxane ( polysiloxane ) polymer dissolved in alcohol and ketone . The weight percentage of -CH3 in SOG is approximately 11 % . The liquid materials ...
Page 281
... SOG film . Furthermore , the intensity of the Si - O - Si vibration increases with argon plasma treatment temperature . The increase of the intensity seems to have resulted from more densification of the film with increasing temperature ...
... SOG film . Furthermore , the intensity of the Si - O - Si vibration increases with argon plasma treatment temperature . The increase of the intensity seems to have resulted from more densification of the film with increasing temperature ...
Page 283
... film increases and leakage current decreases with Ar plasma treatment time . As discussed previously in the FT - IR data , the reduction of silanols ( Si - OH ) and of methyl ( -CH3 ) group in the bulk of SOG film occurs ... SOG films . 283.
... film increases and leakage current decreases with Ar plasma treatment time . As discussed previously in the FT - IR data , the reduction of silanols ( Si - OH ) and of methyl ( -CH3 ) group in the bulk of SOG film occurs ... SOG films . 283.
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch