Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 198
Dielectric Constant Material Method 4.1 - 4.5 ~ 3.5 < 2 Inorganic Undoped plasma SiO2 Fluorine doped SiO2 Porous SiO2 CVD CVD Spin - on 3.0 - 3.7 2.7 - 3.0 2.7 2.7 ~ 2.5 2.3 ~ 2.3 1.9 < 2 Organic Polyimide Spin - on Polysilsesquioxane ...
Dielectric Constant Material Method 4.1 - 4.5 ~ 3.5 < 2 Inorganic Undoped plasma SiO2 Fluorine doped SiO2 Porous SiO2 CVD CVD Spin - on 3.0 - 3.7 2.7 - 3.0 2.7 2.7 ~ 2.5 2.3 ~ 2.3 1.9 < 2 Organic Polyimide Spin - on Polysilsesquioxane ...
Page 239
They are : ( i ) a fluorinated SiO2 ( SiOF ) film by room temperature chemical vapor deposition ( RTCVD - SiOF ) using fluorotrialkoxysilane ( FTAS ) and pure water as gas sources , ( ii ) a room temperature liquid phase deposition ...
They are : ( i ) a fluorinated SiO2 ( SiOF ) film by room temperature chemical vapor deposition ( RTCVD - SiOF ) using fluorotrialkoxysilane ( FTAS ) and pure water as gas sources , ( ii ) a room temperature liquid phase deposition ...
Page 244
( a ) On Poly - Si Patterns ( b ) On Al Patterns LPD - SiO2 LPD - SiO2 PECVD - SiO2 Poly -Si X X AI 1 um 1 pm Fig . 3 SEM cross - sectional views of the LPD - SiO , films deposited on the whole surfaces of substrates with the poly ...
( a ) On Poly - Si Patterns ( b ) On Al Patterns LPD - SiO2 LPD - SiO2 PECVD - SiO2 Poly -Si X X AI 1 um 1 pm Fig . 3 SEM cross - sectional views of the LPD - SiO , films deposited on the whole surfaces of substrates with the poly ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer