Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
From inside the book
Results 1-3 of 40
Page 239
... . Soc . Symp . Proc . Vol . 3811995 Materials Research Society one of the realistic solutions in order to achieve these 239 *Fluorinated SiO2 Films for Interlayer Dielectrics in Quarter-Micron ULSI Multilevel Interconnections Tetsuya Homma.
... . Soc . Symp . Proc . Vol . 3811995 Materials Research Society one of the realistic solutions in order to achieve these 239 *Fluorinated SiO2 Films for Interlayer Dielectrics in Quarter-Micron ULSI Multilevel Interconnections Tetsuya Homma.
Page 240
... SiO2 film formed by atmospheric pressure chemical vapor deposition ( APCVD ) ... films deposition was carried out with a low - pressure chemical vapor ... films were deposited on Si substrates at the deposition rate of 10 nm / min . The ...
... SiO2 film formed by atmospheric pressure chemical vapor deposition ( APCVD ) ... films deposition was carried out with a low - pressure chemical vapor ... films were deposited on Si substrates at the deposition rate of 10 nm / min . The ...
Page 244
... SiO2 Poly -Si LPD - SiO2 PECVD - SiO2 XX AI 1 μm 1 μm Fig . 3 SEM cross - sectional views of the LPD - SIO , films deposited on the whole surfaces of substrates with the poly - silicon and Al wiring patterns , respectively . Figure 3 ...
... SiO2 Poly -Si LPD - SiO2 PECVD - SiO2 XX AI 1 μm 1 μm Fig . 3 SEM cross - sectional views of the LPD - SIO , films deposited on the whole surfaces of substrates with the poly - silicon and Al wiring patterns , respectively . Figure 3 ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch