Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 148
... solid dots and the predicted result based on PS bulk thermal expansion coefficient is given as the solid line . The lateral constraint due to silicon wafer has been taken into consideration to construct the results given as the solid ...
... solid dots and the predicted result based on PS bulk thermal expansion coefficient is given as the solid line . The lateral constraint due to silicon wafer has been taken into consideration to construct the results given as the solid ...
Page 268
... solid even though the distributed solid mass occupies only a fraction of its total volume . Figure 1 shows a simplified structural model for silica aerogel in which two levels of porosity are identified ; microporosity ( < 2nm ) within ...
... solid even though the distributed solid mass occupies only a fraction of its total volume . Figure 1 shows a simplified structural model for silica aerogel in which two levels of porosity are identified ; microporosity ( < 2nm ) within ...
Page 278
... Solid Films 212 , 232 ( 1992 ) . S.V. Nguyen , T. Nguyen , H. Treichel , and O. Spindler , J. Electrochem . Soc . 141 , 1633 ( 1994 ) . 7. D. C. Cameron , M. Z. Karim , and M. S. J. Hashmi , Thin Solid Films 236 , 96 ( 1993 ) . M. Maeda ...
... Solid Films 212 , 232 ( 1992 ) . S.V. Nguyen , T. Nguyen , H. Treichel , and O. Spindler , J. Electrochem . Soc . 141 , 1633 ( 1994 ) . 7. D. C. Cameron , M. Z. Karim , and M. S. J. Hashmi , Thin Solid Films 236 , 96 ( 1993 ) . M. Maeda ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch