Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Results 1-3 of 12
Page 242
... TEOS / O , SiO2 film . The RTCVD - SiOF film is conformably deposited on the substrate surface with Al wiring patterns , as shown in Fig . 1 ( a ) . The LPD - SiO2 film is selectively deposited between wiring W patterns , as shown in ...
... TEOS / O , SiO2 film . The RTCVD - SiOF film is conformably deposited on the substrate surface with Al wiring patterns , as shown in Fig . 1 ( a ) . The LPD - SiO2 film is selectively deposited between wiring W patterns , as shown in ...
Page 244
... TEOS / O , SiO2 film . For the RTCVD - SiOF film , two absorption peaks corresponding to Si - F and Si - O bonds are ... TEOS / O3 SiO2 OH SI - OH 950 cm Si - O 1075 cm - 1 4000 3000 2000 1000 400 Wavenumber ( cm - 1 ) Fig . 4 FTIR ...
... TEOS / O , SiO2 film . For the RTCVD - SiOF film , two absorption peaks corresponding to Si - F and Si - O bonds are ... TEOS / O3 SiO2 OH SI - OH 950 cm Si - O 1075 cm - 1 4000 3000 2000 1000 400 Wavenumber ( cm - 1 ) Fig . 4 FTIR ...
Page 258
... TEOS CVD SiO2 as a capping layer , we had to subtract its contribution . We deposited TEOS CVD SiO , on several Si wafers without SOGS and measured the capacitance of the TEOS CVD SiO , layer . The results of permittivities are ...
... TEOS CVD SiO2 as a capping layer , we had to subtract its contribution . We deposited TEOS CVD SiO , on several Si wafers without SOGS and measured the capacitance of the TEOS CVD SiO , layer . The results of permittivities are ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch