Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 10
... Table IV . The dielectric constant values , obtained by optical and electrical measurements , are given in Table V. It should be noted that some polyimide films have considerable anisotropy in its dielectric properties . The important ...
... Table IV . The dielectric constant values , obtained by optical and electrical measurements , are given in Table V. It should be noted that some polyimide films have considerable anisotropy in its dielectric properties . The important ...
Page 57
... Table 1 could be photopolymerized by irradiation with UV light in presence of a diaryliodonium or triarylsulfonium ... Table 2. The temperature at which a 10 % weight loss occurs gives an approximate measure of the thermal stability of ...
... Table 1 could be photopolymerized by irradiation with UV light in presence of a diaryliodonium or triarylsulfonium ... Table 2. The temperature at which a 10 % weight loss occurs gives an approximate measure of the thermal stability of ...
Page 96
... Table I. Properties of polyphenylquinoxaline and polyimide films Property PPQ PMDA / ODA Glass transition temperature ( ° C ) 365 360 Thermal decomposition in air ( ° C ) 500 450 Moisture absorption ( wt . % ) 1.0 3.5 Dielectric ...
... Table I. Properties of polyphenylquinoxaline and polyimide films Property PPQ PMDA / ODA Glass transition temperature ( ° C ) 365 360 Thermal decomposition in air ( ° C ) 500 450 Moisture absorption ( wt . % ) 1.0 3.5 Dielectric ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch