Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 10
They are listed in Table IV . The dielectric constant values , obtained by optical and electrical measurements , are given in Table V. It should be noted that some polyimide films have considerable anisotropy in its dielectric ...
They are listed in Table IV . The dielectric constant values , obtained by optical and electrical measurements , are given in Table V. It should be noted that some polyimide films have considerable anisotropy in its dielectric ...
Page 57
Photopolymerization All of the monomers shown in Table 1 could be photopolymerized by irradiation with UV light in presence of a diaryliodonium or triarylsulfonium salt photoinitiator . 10 Typically , polymerization occurred within ...
Photopolymerization All of the monomers shown in Table 1 could be photopolymerized by irradiation with UV light in presence of a diaryliodonium or triarylsulfonium salt photoinitiator . 10 Typically , polymerization occurred within ...
Page 96
Table I. Properties of polyphenylquinoxaline and polyimide films PPQ PMDA / ODA 365 360 500 450 1.0 3.5 Property Glass transition temperature ( ° C ) Thermal decomposition in air ( ° C ) Moisture absorption ( wt .
Table I. Properties of polyphenylquinoxaline and polyimide films PPQ PMDA / ODA 365 360 500 450 1.0 3.5 Property Glass transition temperature ( ° C ) Thermal decomposition in air ( ° C ) Moisture absorption ( wt .
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |