Low-dielectric Constant Materials |
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Page 10
They are listed in Table IV. The dielectric constant values, obtained by optical
and electrical measurements, are given in Table V. It should be noted that some
polyimide films have considerable anisotropy in its dielectric properties.
They are listed in Table IV. The dielectric constant values, obtained by optical
and electrical measurements, are given in Table V. It should be noted that some
polyimide films have considerable anisotropy in its dielectric properties.
Page 96
Table I. Properties of polyphenylquinoxaline and polyimide films These data
were the first to be reported8 but the polyphenylquinoxaline films were evaluated
by different groups of researchers who published additional information
concerning ...
Table I. Properties of polyphenylquinoxaline and polyimide films These data
were the first to be reported8 but the polyphenylquinoxaline films were evaluated
by different groups of researchers who published additional information
concerning ...
Page 263
Experimental data from Table 1. for 1.5 hours at 70°C. In the second step, the
stock solution was diluted to 70 vol.% with ethanol, followed by addition of a
catalyst. One ml of the catalyst (0.5 M NH4OH) was added to 10 ml of the stock
solution.
Experimental data from Table 1. for 1.5 hours at 70°C. In the second step, the
stock solution was diluted to 70 vol.% with ethanol, followed by addition of a
catalyst. One ml of the catalyst (0.5 M NH4OH) was added to 10 ml of the stock
solution.
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
23 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Author | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |