Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 10
They are listed in Table IV . The dielectric constant values , obtained by optical
and electrical measurements , are given in Table V . It should be noted that some
polyimide films have considerable anisotropy in its dielectric properties .
They are listed in Table IV . The dielectric constant values , obtained by optical
and electrical measurements , are given in Table V . It should be noted that some
polyimide films have considerable anisotropy in its dielectric properties .
Page 142
At higher temperature, the Young's modulus reduces significantly and the
elongation at break (EAB) is substantially higher (see Table 1). Young's modulus
of various electronic materials are listed in Table 3 for comparison purpose.
Figure 4 ...
At higher temperature, the Young's modulus reduces significantly and the
elongation at break (EAB) is substantially higher (see Table 1). Young's modulus
of various electronic materials are listed in Table 3 for comparison purpose.
Figure 4 ...
Page 209
Table V . Adhesion strength of metal on PA - n as measured using scotch tape
test . Metal Scotch Tape Test Peel ... Table VI shows the refractive index and
thickness variation due to thermal annealing . The changes are small indicating
its ...
Table V . Adhesion strength of metal on PA - n as measured using scotch tape
test . Metal Scotch Tape Test Peel ... Table VI shows the refractive index and
thickness variation due to thermal annealing . The changes are small indicating
its ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers