Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 46
Teflon AF ( 1600 ) A two step vapor deposition process has been developed to produce smooth , uniform , and pin - hole free Teflon AF ( 1600 ) films from 0.1 um to 10 um in thickness ( 1 ) . In comparison to the conventional one step ...
Teflon AF ( 1600 ) A two step vapor deposition process has been developed to produce smooth , uniform , and pin - hole free Teflon AF ( 1600 ) films from 0.1 um to 10 um in thickness ( 1 ) . In comparison to the conventional one step ...
Page 95
solids in a 65:35 mixture of meta - cresol and xylene , filtered through a 0.2 um teflon membrane , was used to prepare the film samples . They were made by casting the solution onto 40 x 60 cm2 glass plates to achieve a wet layer ...
solids in a 65:35 mixture of meta - cresol and xylene , filtered through a 0.2 um teflon membrane , was used to prepare the film samples . They were made by casting the solution onto 40 x 60 cm2 glass plates to achieve a wet layer ...
Page 98
The powdered polymers were dissolved at 13-15 % concentration in NMP or N , N - dimethylacetamide to prepare the final solutions which were filtered through 0.2 um teflon filters . A series of 20 um - thick films were made by using a ...
The powdered polymers were dissolved at 13-15 % concentration in NMP or N , N - dimethylacetamide to prepare the final solutions which were filtered through 0.2 um teflon filters . A series of 20 um - thick films were made by using a ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |