Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 46
Teflon AF (1600) A two step vapor deposition process has been developed ... It
has also been shown that Teflon AF (1600) thin films deposited by the two step
deposition process are much smoother than laser-ablated thin films (2). The key ...
Teflon AF (1600) A two step vapor deposition process has been developed ... It
has also been shown that Teflon AF (1600) thin films deposited by the two step
deposition process are much smoother than laser-ablated thin films (2). The key ...
Page 46
Teflon AF ( 1600 ) A two step vapor deposition process has been developed to ...
It has also been shown that Teflon AF ( 1600 ) thin films deposited by the two step
deposition process are much smoother than laser - ablated thin films ( 2 ) .
Teflon AF ( 1600 ) A two step vapor deposition process has been developed to ...
It has also been shown that Teflon AF ( 1600 ) thin films deposited by the two step
deposition process are much smoother than laser - ablated thin films ( 2 ) .
Page 198
... Poly - naphthalene CVD Amorphous Teflon Spin - on Polymer foams Spin - on
< 2 COMMON INTEGRATION PROBLEMS In order to successfully integrate the
low - dielectric - constant materials into standard on - chip interconnect structures
...
... Poly - naphthalene CVD Amorphous Teflon Spin - on Polymer foams Spin - on
< 2 COMMON INTEGRATION PROBLEMS In order to successfully integrate the
low - dielectric - constant materials into standard on - chip interconnect structures
...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers