Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 46
... Teflon AF ( 1600 ) A two step vapor deposition process has been developed to produce smooth , uniform , and pin - hole free Teflon AF ( 1600 ) films from 0.1 μm to 10 μm in thickness ( 1 ) . In comparison to the conventional one step ...
... Teflon AF ( 1600 ) A two step vapor deposition process has been developed to produce smooth , uniform , and pin - hole free Teflon AF ( 1600 ) films from 0.1 μm to 10 μm in thickness ( 1 ) . In comparison to the conventional one step ...
Page 95
... teflon membrane , was used to prepare the film samples . They were made by casting the solution onto 40 × 60 cm2 glass plates to achieve a wet layer thickness of about 400 μm . The solvents were evaporated in a convection oven at 100 ̊C ...
... teflon membrane , was used to prepare the film samples . They were made by casting the solution onto 40 × 60 cm2 glass plates to achieve a wet layer thickness of about 400 μm . The solvents were evaporated in a convection oven at 100 ̊C ...
Page 98
... teflon filters . A series of 20 μm - thick films were made by using a print coater similar to that employed with PPQ , the wet films being dried for one hour each at 80 , 150 and 350 ° C in nitrogen . Discussion 3.5 ( 5 ) PERMITTIVITY ...
... teflon filters . A series of 20 μm - thick films were made by using a print coater similar to that employed with PPQ , the wet films being dried for one hour each at 80 , 150 and 350 ° C in nitrogen . Discussion 3.5 ( 5 ) PERMITTIVITY ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch