Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 45
... Teflon AF 1600 ( amorphous ) . These films were deposited at substrate temperatures between -20 and 350 ° C and at deposition pressure was 10-4-2.5 Torr . The film thicknesses were between 0.1-10 μ and dielectric constants were between ...
... Teflon AF 1600 ( amorphous ) . These films were deposited at substrate temperatures between -20 and 350 ° C and at deposition pressure was 10-4-2.5 Torr . The film thicknesses were between 0.1-10 μ and dielectric constants were between ...
Page 46
... Teflon AF ( 1600 ) A two step vapor deposition process has been developed to produce smooth , uniform , and pin - hole free Teflon AF ( 1600 ) films from 0.1 μm to 10 μm in thickness ( 1 ) . In comparison to the conventional one step ...
... Teflon AF ( 1600 ) A two step vapor deposition process has been developed to produce smooth , uniform , and pin - hole free Teflon AF ( 1600 ) films from 0.1 μm to 10 μm in thickness ( 1 ) . In comparison to the conventional one step ...
Page 49
... Teflon AF has a value of 1.9 . But VLSI interconnection and packaging applications also require high thermal stability of the films being used . The thickness of PA - N film begins to shrink at 350 ° C while annealing in nitrogen . ( 15 ) ...
... Teflon AF has a value of 1.9 . But VLSI interconnection and packaging applications also require high thermal stability of the films being used . The thickness of PA - N film begins to shrink at 350 ° C while annealing in nitrogen . ( 15 ) ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch