Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 17
... ULSI Applications , 517 ( 1994 ) . C.H. Ting , et al . , Advanced Metallization for ULSI Applications , 49 ( 1994 ) . J. Paraszczak , et al . , IEDM Tech , Digest , 261 ( 1993 ) . Cost of Ownership Model , SEMATECH report 91020473B ...
... ULSI Applications , 517 ( 1994 ) . C.H. Ting , et al . , Advanced Metallization for ULSI Applications , 49 ( 1994 ) . J. Paraszczak , et al . , IEDM Tech , Digest , 261 ( 1993 ) . Cost of Ownership Model , SEMATECH report 91020473B ...
Page 31
... ULSI a b Y.K. Lee , S.P. Murarka , S. -P . Jeng , and B. Auman * CIE , Rensselaer Polytechnic Institute , Troy , NY 12180 b SPDC , Texas Instruments , Dallas , TX 75243 DuPont Electronics , DuPont , Wilmington , DE 19880 c Abstract ...
... ULSI a b Y.K. Lee , S.P. Murarka , S. -P . Jeng , and B. Auman * CIE , Rensselaer Polytechnic Institute , Troy , NY 12180 b SPDC , Texas Instruments , Dallas , TX 75243 DuPont Electronics , DuPont , Wilmington , DE 19880 c Abstract ...
Page 239
... ULSI MULTILEVEL INTERCONNECTIONS TETSUYA HOMMA ULSI Device Development Laboratories , NEC Corporation 1120 Shimokuzawa , Sagamihara , Kanagawa 229 , JAPAN ABSTRACT Fluorinated SiO , films for use as interlayer dielectrics in ULSI ...
... ULSI MULTILEVEL INTERCONNECTIONS TETSUYA HOMMA ULSI Device Development Laboratories , NEC Corporation 1120 Shimokuzawa , Sagamihara , Kanagawa 229 , JAPAN ABSTRACT Fluorinated SiO , films for use as interlayer dielectrics in ULSI ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch