Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 274
... ( a - tC ) and by depositing cubic BN ( c - BN ) films . a - tC films are stable - as indicated by Raman at temperatures up to 800 ° C in inert ambients , 13 while c - BN is an environmentally ... a - tC RESULTS The resistivities of a - tC 274.
... ( a - tC ) and by depositing cubic BN ( c - BN ) films . a - tC films are stable - as indicated by Raman at temperatures up to 800 ° C in inert ambients , 13 while c - BN is an environmentally ... a - tC RESULTS The resistivities of a - tC 274.
Page 275
... a - tC RESULTS The resistivities of a - tC films measured from MIM structures exhibit a strong dependence on the laser energy density and the presence or nature of the gas ambient in the deposition system . Resistivities ( measured normal ...
... a - tC RESULTS The resistivities of a - tC films measured from MIM structures exhibit a strong dependence on the laser energy density and the presence or nature of the gas ambient in the deposition system . Resistivities ( measured normal ...
Page 276
... a dielectric constant exceeding 8. It might be expected that a - tC films deposited in H2 ambients - which show Raman features similar to that of DLC ... the average dielectric constants Table II : Measured dielectric constants of a - tC 276.
... a dielectric constant exceeding 8. It might be expected that a - tC films deposited in H2 ambients - which show Raman features similar to that of DLC ... the average dielectric constants Table II : Measured dielectric constants of a - tC 276.
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch