Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 42
Moisture absorption The water absorption of polyimide film is studied by measuring the state of stress in the film before and after water exposure . Water absorption may cause the lateral expansion of film , which may induce a change in ...
Moisture absorption The water absorption of polyimide film is studied by measuring the state of stress in the film before and after water exposure . Water absorption may cause the lateral expansion of film , which may induce a change in ...
Page 42
Moisture absorption The water absorption of polyimide film is studied by measuring the state of stress in the film before and after water exposure . Water absorption may cause the lateral expansion of film , which may induce a change in ...
Moisture absorption The water absorption of polyimide film is studied by measuring the state of stress in the film before and after water exposure . Water absorption may cause the lateral expansion of film , which may induce a change in ...
Page 121
In the case of back irradiation , most of the high frequency photons get absorbed before they reach the polyimide film , because the absorption coefficient in silicon increases with frequency ( 5 ) . The photon flux at the interface for ...
In the case of back irradiation , most of the high frequency photons get absorbed before they reach the polyimide film , because the absorption coefficient in silicon increases with frequency ( 5 ) . The photon flux at the interface for ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |