Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 33
Moisture Absorption Moisture content is measured by the change of stress level (
measuring the change in the radius of ... film due to water absorption before and
after immersion of the fluorinated films in deionized water at room temperature ...
Moisture Absorption Moisture content is measured by the change of stress level (
measuring the change in the radius of ... film due to water absorption before and
after immersion of the fluorinated films in deionized water at room temperature ...
Page 42
Moisture absorption The water absorption of polyimide film is studied by
measuring the state of stress in the film before and after water exposure . Water
absorption may cause the lateral expansion of film , which may induce a change
in the ...
Moisture absorption The water absorption of polyimide film is studied by
measuring the state of stress in the film before and after water exposure . Water
absorption may cause the lateral expansion of film , which may induce a change
in the ...
Page 121
In the case of back irradiation , most of the high frequency photons get absorbed
before they reach the polyimide film , because the absorption coefficient in silicon
increases with frequency ( 5 ) . The photon flux at the interface for different lamp ...
In the case of back irradiation , most of the high frequency photons get absorbed
before they reach the polyimide film , because the absorption coefficient in silicon
increases with frequency ( 5 ) . The photon flux at the interface for different lamp ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers