Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 42
... absorption The water absorption of polyimide film is studied by measuring the state of stress in the film before and after water exposure . Water absorption may cause the lateral expansion of film , which may induce a change in the ...
... absorption The water absorption of polyimide film is studied by measuring the state of stress in the film before and after water exposure . Water absorption may cause the lateral expansion of film , which may induce a change in the ...
Page 121
... absorbed before they reach the polyimide film , because the absorption coefficient in silicon increases with frequency [ 5 ] . The photon flux at the interface for different lamp configurations is shown in Figure 6. This was calculated ...
... absorbed before they reach the polyimide film , because the absorption coefficient in silicon increases with frequency [ 5 ] . The photon flux at the interface for different lamp configurations is shown in Figure 6. This was calculated ...
Page 231
... absorption . A sample of each polymer was polished for 2 seconds to make the surface as rough as that of the samples which were polished for 20 seconds . Comparison of the signals of as deposited samples , samples polished for 2 seconds ...
... absorption . A sample of each polymer was polished for 2 seconds to make the surface as rough as that of the samples which were polished for 20 seconds . Comparison of the signals of as deposited samples , samples polished for 2 seconds ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch