Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
From inside the book
Results 1-3 of 6
Page 4
... alloy films are deposited by sputtering and patterned by plasma etching . The W- plug is formed by CVD deposition followed by etchback or CMP process . This interconnect structure and fabrication process are illustrated in Fig . 3 . ( 2 ) ...
... alloy films are deposited by sputtering and patterned by plasma etching . The W- plug is formed by CVD deposition followed by etchback or CMP process . This interconnect structure and fabrication process are illustrated in Fig . 3 . ( 2 ) ...
Page 178
... alloys [ 7 ] . These promising , but preliminary , results need further evaluation using standard test structures to compare copper and advanced aluminum alloy interconnections under identical conditions . Additional electromigration ...
... alloys [ 7 ] . These promising , but preliminary , results need further evaluation using standard test structures to compare copper and advanced aluminum alloy interconnections under identical conditions . Additional electromigration ...
Page 180
... Alloy Composition Cu Resistivity ( Micro - Ohm cm ) 16- 14- 12- 10- 8- 6- 4- 2- 2 Before Annealing CRC Handbook Data After 400C / Ar / 30min Simulation Result 10 12 Mg Atomic Percentage Figure 1 Resistivity of Mg - Doped Copper Alloy ...
... Alloy Composition Cu Resistivity ( Micro - Ohm cm ) 16- 14- 12- 10- 8- 6- 4- 2- 2 Before Annealing CRC Handbook Data After 400C / Ar / 30min Simulation Result 10 12 Mg Atomic Percentage Figure 1 Resistivity of Mg - Doped Copper Alloy ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch