Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
From inside the book
Results 1-3 of 13
Page 74
... alternating copolyimide precursor products consist of two different types of linkages , amic isopropyl ester and amic acid which were originated from the new diamine monomer and the conventional amine - anhydride condensation reaction ...
... alternating copolyimide precursor products consist of two different types of linkages , amic isopropyl ester and amic acid which were originated from the new diamine monomer and the conventional amine - anhydride condensation reaction ...
Page 76
... alternating copolyimide ( see Fig.2 ) . However , in the transmission pattern the diffraction peaks at > 14.0 ° ( 20 ) are relatively weak in intensity and broad in shape in comparison with those of the alternating copolyimide ...
... alternating copolyimide ( see Fig.2 ) . However , in the transmission pattern the diffraction peaks at > 14.0 ° ( 20 ) are relatively weak in intensity and broad in shape in comparison with those of the alternating copolyimide ...
Page 77
... alternating PMDA- BPDA / PDA copolyimide . For alternating PMDA - BTDA / PDA copolyimide , the projected length of chemical repeat unit and mean intermolecular distance are 29.45 Å and 4.65 Å , respectively . The alternating PMDA - ODPA ...
... alternating PMDA- BPDA / PDA copolyimide . For alternating PMDA - BTDA / PDA copolyimide , the projected length of chemical repeat unit and mean intermolecular distance are 29.45 Å and 4.65 Å , respectively . The alternating PMDA - ODPA ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
30 other sections not shown
Other editions - View all
Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch