Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 55
... aluminum coated wafers , very poor coatings resulted . This problem was resolved by incorporating a small amount of a linear poly ( m - indane ) ( Mw = 19,170 g / mol ) into the spin coating solution . Using this approach , the solution ...
... aluminum coated wafers , very poor coatings resulted . This problem was resolved by incorporating a small amount of a linear poly ( m - indane ) ( Mw = 19,170 g / mol ) into the spin coating solution . Using this approach , the solution ...
Page 106
... aluminum films were deposited on the backside of the substrates by sputtering . Gold was evaporated on top of the fluorinated films as an electrode through a metal mask which had a number of circular windows with 1.0 mm in diameter to ...
... aluminum films were deposited on the backside of the substrates by sputtering . Gold was evaporated on top of the fluorinated films as an electrode through a metal mask which had a number of circular windows with 1.0 mm in diameter to ...
Page 178
... aluminum interconnect technology . We assume that all advanced interconnect alternatives will include globally planarized oxides covering the silicon wafer following the front - end IC processing . This global planarization is only ...
... aluminum interconnect technology . We assume that all advanced interconnect alternatives will include globally planarized oxides covering the silicon wafer following the front - end IC processing . This global planarization is only ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch