Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 23
... anisotropy in in- and out - of - plane values . While the dielectric constant out - of plane is reasonably low , the in - plane dielectric constant is significantly higher . This is a consequence of the chain orientation in the film ...
... anisotropy in in- and out - of - plane values . While the dielectric constant out - of plane is reasonably low , the in - plane dielectric constant is significantly higher . This is a consequence of the chain orientation in the film ...
Page 141
... anisotropic in terms of its optical , dielectric and mechanical properties.23 The in - plane dielectric constant is ... anisotropy apparently is the layer like microstructure . Other investigations have found that most polymer chains in ...
... anisotropic in terms of its optical , dielectric and mechanical properties.23 The in - plane dielectric constant is ... anisotropy apparently is the layer like microstructure . Other investigations have found that most polymer chains in ...
Page 222
... Anisotropic PEN / TIN Pl Coat / Cure PEN Dep Bond Pad Photo Bond Pad Etch HM FEN P Anisotropic Polyimide TIN Al ( Cu ) PEN TIN ARC Al ( Cu ) . Polyimide Al ( Cu ) TIN ARC ACU ) M2 Dep M2 PR M2 Etch & PR Strip Metal Anneal Figure 2 ...
... Anisotropic PEN / TIN Pl Coat / Cure PEN Dep Bond Pad Photo Bond Pad Etch HM FEN P Anisotropic Polyimide TIN Al ( Cu ) PEN TIN ARC Al ( Cu ) . Polyimide Al ( Cu ) TIN ARC ACU ) M2 Dep M2 PR M2 Etch & PR Strip Metal Anneal Figure 2 ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch