Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 34
... annealing temperature from 250 ° C to 450 ° C in N2 ambient . No significant change of refractive index was observed . The small increase of refractive index after 350 ° C annealing treatment in N2 ambient for 1h . could be associated ...
... annealing temperature from 250 ° C to 450 ° C in N2 ambient . No significant change of refractive index was observed . The small increase of refractive index after 350 ° C annealing treatment in N2 ambient for 1h . could be associated ...
Page 50
... Annealing at Annealing at -15 ° C in Air Annealing at Annealing at 300 ° C in N2 510 ° C in N2 250 ° C in N2 | 600 ° C in N2 600 ° C in N2 Acknowledgment : Financial support of this effort has been provided by the IBM Corporation ...
... Annealing at Annealing at -15 ° C in Air Annealing at Annealing at 300 ° C in N2 510 ° C in N2 250 ° C in N2 | 600 ° C in N2 600 ° C in N2 Acknowledgment : Financial support of this effort has been provided by the IBM Corporation ...
Page 253
... annealing temperature [ ° C ] Fig . 5. The thickness of the a- C : F films as a function of annealing temperature . reactor due to the high helicon plasma density . The higher deposition rate of CF , as compared with CF , in the helicon ...
... annealing temperature [ ° C ] Fig . 5. The thickness of the a- C : F films as a function of annealing temperature . reactor due to the high helicon plasma density . The higher deposition rate of CF , as compared with CF , in the helicon ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch