Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 124
... bond to facilitate reengineering polymers with improved thermal stability . This simple principles can also be applied to moisture absorption of low K ILD materials . In conclusion , the single carbon to carbon bond in Parylene N is a weak ...
... bond to facilitate reengineering polymers with improved thermal stability . This simple principles can also be applied to moisture absorption of low K ILD materials . In conclusion , the single carbon to carbon bond in Parylene N is a weak ...
Page 222
... Bond Pad Photo Bond Pad Etch HM FEN P Anisotropic Polyimide TIN Al ( Cu ) PEN TIN ARC Al ( Cu ) . Polyimide Al ( Cu ) TIN ARC ACU ) M2 Dep M2 PR M2 Etch & PR Strip Metal Anneal Figure 2. Schematic of process flow for using polyimide ILD ...
... Bond Pad Photo Bond Pad Etch HM FEN P Anisotropic Polyimide TIN Al ( Cu ) PEN TIN ARC Al ( Cu ) . Polyimide Al ( Cu ) TIN ARC ACU ) M2 Dep M2 PR M2 Etch & PR Strip Metal Anneal Figure 2. Schematic of process flow for using polyimide ILD ...
Page 281
... bond and of the broken - frame bond seems to be enhanced at higher temperature . The variation in the Si - O - Si peak position during the high - temperature anneals in N2 ambient appears to be due to the densification , and thus ...
... bond and of the broken - frame bond seems to be enhanced at higher temperature . The variation in the Si - O - Si peak position during the high - temperature anneals in N2 ambient appears to be due to the densification , and thus ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch