Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 124
Therefore , single CH2 - CH2 in parylene N is the thermally weakest bond . It should be pointed out that both MS and FTIR are not able to determine the thermal breakdown of the C - H bond at this time . > Using isothermal TGA , MS and ...
Therefore , single CH2 - CH2 in parylene N is the thermally weakest bond . It should be pointed out that both MS and FTIR are not able to determine the thermal breakdown of the C - H bond at this time . > Using isothermal TGA , MS and ...
Page 222
Bond Pad opening is not indicated in final schematic detail . The via and passivation etches are composed of several steps , and their order is : ( 1 ) PEN hardmask etch in CHF3 / 02 , ( 2 ) polyimide etch in O2 , ( 3 ) PEN / TiN etch ...
Bond Pad opening is not indicated in final schematic detail . The via and passivation etches are composed of several steps , and their order is : ( 1 ) PEN hardmask etch in CHF3 / 02 , ( 2 ) polyimide etch in O2 , ( 3 ) PEN / TiN etch ...
Page 281
1 -1 known to be due to an elongated and branched structure of Si - O - Si bonds , respectively [ 8 ] . ... The reconstruction of the loose - bond and of the broken - frame bond seems to be enhanced at higher temperature .
1 -1 known to be due to an elongated and branched structure of Si - O - Si bonds , respectively [ 8 ] . ... The reconstruction of the loose - bond and of the broken - frame bond seems to be enhanced at higher temperature .
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |