Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 108
We believe that this is due to a decrease in the molecular weight resulting from
CC bond cleavage . Such a side reaction will be controlled by removing residual
oxygen in the chamber [ 4 ] . Table 2 . Thermal stability of the fluorinated
polymers ...
We believe that this is due to a decrease in the molecular weight resulting from
CC bond cleavage . Such a side reaction will be controlled by removing residual
oxygen in the chamber [ 4 ] . Table 2 . Thermal stability of the fluorinated
polymers ...
Page 124
Therefore , single CH2 - CH2 in parylene N is the thermally weakest bond . It
should be pointed out that both MS and FTIR are not able to determine the
thermal breakdown of the C - H bond at this time . Using isothermal TGA , MS and
FTIR ...
Therefore , single CH2 - CH2 in parylene N is the thermally weakest bond . It
should be pointed out that both MS and FTIR are not able to determine the
thermal breakdown of the C - H bond at this time . Using isothermal TGA , MS and
FTIR ...
Page 281
known to be due to an elongated and branched structure of Si - O - Si bonds ,
respectively [ 8 ] . ... The reconstruction of the loose - bond and of the broken -
frame bond seems to be enhanced at higher temperature . The variation in the Si
- O ...
known to be due to an elongated and branched structure of Si - O - Si bonds ,
respectively [ 8 ] . ... The reconstruction of the loose - bond and of the broken -
frame bond seems to be enhanced at higher temperature . The variation in the Si
- O ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers