Low-dielectric Constant Materials |
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Page 124
Therefore, single CH2-CH2 in parylene N is the thermally weakest bond. It
should be pointed out that both MS and FTIR are not able to determine the
thermal breakdown of the C-H bond at this time. Using isothermal TGA, MS and
FTIR, we ...
Therefore, single CH2-CH2 in parylene N is the thermally weakest bond. It
should be pointed out that both MS and FTIR are not able to determine the
thermal breakdown of the C-H bond at this time. Using isothermal TGA, MS and
FTIR, we ...
Page 281
known to be due to an elongated and branched structure of Si-O-Si bonds,
respectively[8]. The absorbance peak of the methyl (-CH3) group in argon
plasma treated film is much lower than that of the film cured in a furnace. The
intensity of ...
known to be due to an elongated and branched structure of Si-O-Si bonds,
respectively[8]. The absorbance peak of the methyl (-CH3) group in argon
plasma treated film is much lower than that of the film cured in a furnace. The
intensity of ...
Page 283
As discussed previously in the FT-IR data, the reduction of silanols (Si-OH) and of
methyl (-CH3) group in the bulk of SOG film occurs during argon plasma
treatment, and thus the reconstructions of the loose-bond and of the broken-
frame bond ...
As discussed previously in the FT-IR data, the reduction of silanols (Si-OH) and of
methyl (-CH3) group in the bulk of SOG film occurs during argon plasma
treatment, and thus the reconstructions of the loose-bond and of the broken-
frame bond ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
23 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Author | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |