Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 35
... bonds ( 1019 cm1 and 1140 cm1 ) , small amount of O = C - N bonds ( 2173 cm1 and 2096 cm1 ) and CO2 band ( 2354 cm1 and 2320 cm1 ) are detected in Fig . 5 , indicating a massive decomposition process takes place . The increase in the ...
... bonds ( 1019 cm1 and 1140 cm1 ) , small amount of O = C - N bonds ( 2173 cm1 and 2096 cm1 ) and CO2 band ( 2354 cm1 and 2320 cm1 ) are detected in Fig . 5 , indicating a massive decomposition process takes place . The increase in the ...
Page 124
... bond to facilitate reengineering polymers with improved thermal stability . This simple principles can also be applied to moisture absorption of low K ILD materials . In conclusion , the single carbon to carbon bond in Parylene N is a weak ...
... bond to facilitate reengineering polymers with improved thermal stability . This simple principles can also be applied to moisture absorption of low K ILD materials . In conclusion , the single carbon to carbon bond in Parylene N is a weak ...
Page 281
... bonds , respectively [ 8 ] . The absorbance peak of the methyl ( -CH3 ) group in argon plasma treated film is much ... bond and of the broken - frame bond seems to be enhanced at higher temperature . The variation in the Si - O - Si peak ...
... bonds , respectively [ 8 ] . The absorbance peak of the methyl ( -CH3 ) group in argon plasma treated film is much ... bond and of the broken - frame bond seems to be enhanced at higher temperature . The variation in the Si - O - Si peak ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch