Low-dielectric Constant Materials |
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Page 148
Once again this is well below the bulk glass transition temperature. The
contraction and expansion of the ultrathin polystyrene films is thermally reversible
. In summary, the above results illustrate that at temperatures well below its bulk
Tg PS ...
Once again this is well below the bulk glass transition temperature. The
contraction and expansion of the ultrathin polystyrene films is thermally reversible
. In summary, the above results illustrate that at temperatures well below its bulk
Tg PS ...
Page 263
Dried gels were characterized using: 1) helium pycnometry (skeletal density), 2)
mercury displacement (bulk density), 3) linear dilatometry (drying shrinkage), 4)
nitrogen adsorption/condensation (surface area and pore size distribution), ...
Dried gels were characterized using: 1) helium pycnometry (skeletal density), 2)
mercury displacement (bulk density), 3) linear dilatometry (drying shrinkage), 4)
nitrogen adsorption/condensation (surface area and pore size distribution), ...
Page 273
INTRODUCTION Insulators formed from first-row elements are good candidates
for low permittivity dielectrics, with their bulk dielectric constants in the range - 5
to 8 for such materials as BeO, c- BN, and diamond. 1 Insulating films of carbon ...
INTRODUCTION Insulators formed from first-row elements are good candidates
for low permittivity dielectrics, with their bulk dielectric constants in the range - 5
to 8 for such materials as BeO, c- BN, and diamond. 1 Insulating films of carbon ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
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Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI