Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 273
... BN ( c - BN ) . The dielectric characteristics of hydrogen - free DLC and c - BN that have been deposited by pulsed - laser deposition ( PLD ) have been evaluated using metal - insulator - metal and metal - insulator - semiconductor ...
... BN ( c - BN ) . The dielectric characteristics of hydrogen - free DLC and c - BN that have been deposited by pulsed - laser deposition ( PLD ) have been evaluated using metal - insulator - metal and metal - insulator - semiconductor ...
Page 274
... BN ( c - BN ) films . a - tC films are stable - as indicated by Raman at temperatures up to 800 ° C in inert ambients , 13 while c - BN is an environmentally - stable bulk ceramic . The dielectric characteristics of these films are ...
... BN ( c - BN ) films . a - tC films are stable - as indicated by Raman at temperatures up to 800 ° C in inert ambients , 13 while c - BN is an environmentally - stable bulk ceramic . The dielectric characteristics of these films are ...
Page 276
... c - BN interface was high , as indicated by the CV stretch - out under depletion bias , and this may lower the apparent accumulation capacitance . Therefore , the measured dielectric constants based on the MIS diodes should be ...
... c - BN interface was high , as indicated by the CV stretch - out under depletion bias , and this may lower the apparent accumulation capacitance . Therefore , the measured dielectric constants based on the MIS diodes should be ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch