Low-dielectric Constant Materials |
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Page 3
SCALING TREND One of the results in scaling down device dimensions is
increased interconnect capacitance for sub-micron design rules as illustrated in
Fig. 1. In this figure, Cv is the vertical capacitance or inter-line capacitance, C, is
the ...
SCALING TREND One of the results in scaling down device dimensions is
increased interconnect capacitance for sub-micron design rules as illustrated in
Fig. 1. In this figure, Cv is the vertical capacitance or inter-line capacitance, C, is
the ...
Page 136
Test equipments for intra- line capacitance measurements included a HP4194A
Impedance/Gain-phase Analyzer, a HP4140B Picoampere Meter/DC Voltage
Source, a hot chunk, and a probing station controlled by a HP9000 computer.
Test equipments for intra- line capacitance measurements included a HP4194A
Impedance/Gain-phase Analyzer, a HP4140B Picoampere Meter/DC Voltage
Source, a hot chunk, and a probing station controlled by a HP9000 computer.
Page 258
Electric Characterization The permittivities of the SOGs were derived from C-V (
Capacitance Voltage ) measurement. The AC voltage for the capacitance
measurement was 30mV and 100kHz. All of the C-V curves were flat and simple
since n* ...
Electric Characterization The permittivities of the SOGs were derived from C-V (
Capacitance Voltage ) measurement. The AC voltage for the capacitance
measurement was 30mV and 100kHz. All of the C-V curves were flat and simple
since n* ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
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Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI