Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 3
SCALING TREND One of the results in scaling down device dimensions is increased interconnect capacitance for sub - micron design rules as illustrated in Fig . 1. In this figure , C , is the vertical capacitance or inter - line ...
SCALING TREND One of the results in scaling down device dimensions is increased interconnect capacitance for sub - micron design rules as illustrated in Fig . 1. In this figure , C , is the vertical capacitance or inter - line ...
Page 136
Test equipments for intraline capacitance measurements included a HP4194A Impedance / Gain - phase Analyzer ... Space Space Space = 0.6 Line - 0.5 RESULTS AND DISCUSSIONS 3 Capacitances at 1 MHz for eight materials are shown in Table 1.
Test equipments for intraline capacitance measurements included a HP4194A Impedance / Gain - phase Analyzer ... Space Space Space = 0.6 Line - 0.5 RESULTS AND DISCUSSIONS 3 Capacitances at 1 MHz for eight materials are shown in Table 1.
Page 258
A parallel plate capacitance formula was used for the permittivity extraction . To be precise , we measured the capacitances for Al dots with areas of 0.001 , 0.002 , 0.01 and 0.02 cm2 , and , proportionality between the capacitance and ...
A parallel plate capacitance formula was used for the permittivity extraction . To be precise , we measured the capacitances for Al dots with areas of 0.001 , 0.002 , 0.01 and 0.02 cm2 , and , proportionality between the capacitance and ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |